http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016358812-A1

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filingDate 2016-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2016-12-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2016358812-A1
titleOfInvention Reducing contact resistance in vias for copper interconnects
abstract A method of forming an electrical transmission structure that includes forming an opening through an interlevel dielectric layer to expose at least one electrically conductive feature and forming a shield layer on the opening. A gouge is formed in the electrically conductive feature through the opening using a subtractive method during which the shield layer protects the interlevel dielectric layer from being damaged by the subtractive method. A contact is formed within the opening in electrical communication with the at least one electrically conductive feature.
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2020127089-A1
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