http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016351567-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_df74e7352f6daaa16002eec3eefa92de |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-085 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4175 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-778 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0705 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K17-693 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0207 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-778 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-095 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-095 |
| filingDate | 2015-05-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f477647634e5b5c76fa7d887638a18a1 |
| publicationDate | 2016-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-2016351567-A1 |
| titleOfInvention | Switching device for switching radio frequency signals |
| abstract | The invention relates to a switching device for switching radio frequency signals. The switching devices comprises at least a first field effect transistor that comprises a first source node, a first gate node and a first drain node, wherein the first gate node is arranged between a first drain region and a first source region on a semiconductor substrate. The switching device comprises at least a second field effect transistor that comprises a second source node, a second gate node and a second drain node, wherein the second gate node is arranged between a second drain region and a second source region on the same semiconductor substrate. The first source region of the first transistor is directly connected to the second drain region of the second transistor to build a common node of the switching device. An input node and an output node of the switching device are directly connected to the common node. The switching device is built by an even number of field effect transistors on the common semiconductor substrate. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2022173571-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11430882-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11569381-B2 |
| priorityDate | 2015-05-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.