| abstract |
Described herein are compositions for depositing a carbon-doped silicon containing film wherein the composition comprises a first precursor comprising at least one compound selected from the group consisting of: an organoaminoalkylsilane having a formula of R 5 Si(NR 3 R 4 ) x H 3-x wherein x=1, 2, 3; an organoalkoxyalkylsilane having a formula of R 6 Si(OR 7 ) x H 3-x wherein x=1, 2, 3; an organoaminosilane having a formula of R 8 N(SiR 9 (NR 10 R 11 )H) 2 ; an organoaminosilane having a formula of R 8 N(SiR 9 LH) 2 and combinations thereof; and optionally a second precursor comprising a compound having the formula: Si(NR 1 R 2 )H 3 . Also described herein are methods for depositing a carbon-doped silicon-containing film using the composition wherein the method is one selected from the following: cyclic chemical vapor deposition (CCVD), atomic layer deposition (ALD), plasma enhanced ALD (PEALD) and plasma enhanced CCVD (PECCVD). |