| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8ff538ed094988386084565bc7f62aeb |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-4125
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C14-0063
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4916
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1104
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-418
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823462
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B10-12 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-51
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-418
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C16-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C14-00 |
| filingDate |
2016-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_05171e3fc36e1704b0b9e32dd9751506
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_87c23c64199c728619466c46e13367ff |
| publicationDate |
2016-11-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2016343717-A1 |
| titleOfInvention |
Integrated Structure Comprising Neighboring Transistors |
| abstract |
An integrated structure includes a first MOS transistor with a first controllable gate region overlying a first gate dielectric and a second MOS transistor neighboring the first MOS transistor and having a second controllable gate region overlying the first gate dielectric. A common conductive region overlies the first and second gate regions and is separated therefrom by a second gate dielectric. The common conductive region includes a continuous element located over a portion of the first and second gate regions and a branch extending downward from the continuous element toward the substrate as far as the first gate dielectric. The branch located between the first and second gate regions. |
| priorityDate |
2014-03-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |