http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016336544-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c5520dd38cc403678d9f91e0b0ee95fb |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L51-0011 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-166 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L51-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-042 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-56 |
| filingDate | 2016-07-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_32fb3c4d0b860ba3d1dc32930c834ca3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bbeb78d178f139257d95c7f17299d1ac http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ceb22811d0d9a50e9d953b28ee6f1457 |
| publicationDate | 2016-11-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-2016336544-A1 |
| titleOfInvention | Vapor deposition method for producing an organic el panel |
| abstract | The present invention (i) uses a mask unit ( 80 ) including: a shadow mask ( 81 ) that has an opening ( 82 ) and that is smaller in area than a vapor deposition region ( 210 ) of a film formation substrate ( 200 ) and; a vapor deposition source ( 85 ) that has a emission hole ( 86 ) for emitting a vapor deposition particle, the emission hole ( 86 ) being provided so as to face the shadow mask ( 81 ), the shadow mask ( 81 ) and the vapor deposition source ( 85 ) being fixed in position relative to each other, (ii) adjusts an amount of a void between the shadow mask ( 81 ) and the film formation substrate ( 200 ), (iii) moves at least a first one of the mask unit ( 80 ) and the film formation substrate ( 200 ) relative to a second one thereof while uniformly maintaining the amount of the void between the mask unit ( 80 ) and the film formation substrate ( 200 ), and (iv) sequentially deposit the vapor deposition particle onto the vapor deposition region ( 210 ) through the opening ( 82 ) of the shadow mask ( 81 ). This makes it possible to form a high-resolution vapor deposition pattern on a large-sized substrate. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022325397-A1 |
| priorityDate | 2009-09-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 78.