Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42376 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-401 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0653 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0649 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31122 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02115 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4966 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
filingDate |
2016-07-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_48ea40db9fc62259a38b1161c59ace96 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_32851973f943bf24ed4cf9a315f064e4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_888bf566a40c41db8955127fd1def57c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eb89d5e2d1cbc7cb60855ce53480a740 |
publicationDate |
2016-11-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-2016329415-A1 |
titleOfInvention |
Work function metal fill for replacement gate fin field effect transistor process |
abstract |
A method of forming a semiconductor device that includes forming a sacrificial gate structure on a channel portion of a fin structure, wherein the angle at the intersection of the sidewall of the sacrificial gate structure and an upper surface of the channel portion of the fin structure is obtuse. Epitaxial source and drain region structures are formed on a source region portion and a drain region portion of the fin structure. At least one dielectric material is formed on the sidewall of the sacrificial gate structure. The sacrificial gate structure may be removed to provide an opening to the channel portion of the fin structure. A function gate structure is formed in the opening. At least one angle defined by the intersection of a sidewall of the functional gate structure and an upper surface of the channel portion of the fin structure is obtuse. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11192340-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11167532-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11097509-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11660841-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2020312985-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11535553-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11331692-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10014177-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11682716-B2 |
priorityDate |
2014-02-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |