| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2baf849d216e689ecc40ccc931a7a7bc |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G8-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G12-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32139
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3081
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D161-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0332
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-2059
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-094
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-11 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-09
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G12-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-033
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09D161-22 |
| filingDate |
2014-12-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2d338fa9da212910df6f0916095817b8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_31c3da48141cf33839cfbc6b5598dbc1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9a2cf3f9243b10468d4363d9faa4776a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0207ac1bc5b6dff996919c7180c91bf6 |
| publicationDate |
2016-11-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2016326396-A1 |
| titleOfInvention |
Resist underlayer film-forming composition containing novolac polymer having secondary amino group |
| abstract |
A resist underlayer film which has an excellent hard mask function and can form an excellent pattern shape. A resist underlayer film-forming composition to be used for a lithography process, including a novolac polymer obtained by reaction of an aldehyde compound and an aromatic compound having a secondary amino group. The novolac polymer contains a unit structure of Formula (1): n n n n n n n n n n A method for producing a semiconductor device, including the steps of: forming a resist underlayer film from the resist underlayer film-forming composition on a semiconductor substrate; forming a hard mask on the resist underlayer film; further forming a resist film on the hard mask; forming a resist pattern by irradiation with light or an electron beam and development; etching the hard mask by using the formed resist pattern; etching the resist underlayer film by using the patterned hard mask; and processing the semiconductor substrate by using the patterned underlayer film. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11635691-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10998197-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9983476-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11130855-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11300879-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11181821-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11567408-B2 |
| priorityDate |
2013-12-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |