| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-544
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y20-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1844
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-184
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-035236
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-03529
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-035281
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-03046
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-036
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0735 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-036
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0352
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0735
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18 |
| filingDate |
2016-06-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7836fca911bdb0e4d5599ce4a315166c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1218f6f93648858a4e112dd4c932772e |
| publicationDate |
2016-10-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2016308080-A1 |
| titleOfInvention |
Solar cell and manufacturing method thereof |
| abstract |
A solar cell includes a semiconductor substrate of a first conductivity; a pillar-shaped structure constituted by a semiconductor of the first conductivity, the pillar-shaped structure being formed on the semiconductor substrate; a superlattice layer including a barrier layer and a quantum structure layer that are alternately deposited on a side wall of the pillar-shaped structure, the quantum structure layer being constituted by a material having a smaller energy bandgap than that of the barrier layer, the quantum structure layer including a wurtzite type crystal part and a zinc blende type crystal part that are alternately arranged along an axial direction of the pillar-shaped structure; and a semiconductor layer of a second conductivity that is formed so as to surround the superlattice layer, the second conductivity being an opposite conductivity to that of the first conductivity. |
| priorityDate |
2012-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |