| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2029-7858 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7851
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7848
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66636
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0653
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 |
| filingDate |
2015-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dd6906978480f62baa8ec4f911e9db72
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_35344aa7dd5361f9ffcaeb42ba63e2fd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ef2b1c8ae664f2587ae2a56aec9b7562
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c3c1a2ecd0c4f2a2f01edaf414c2fbee |
| publicationDate |
2016-10-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2016293701-A1 |
| titleOfInvention |
Semiconductor structure having enlarged regrowth regions and manufacturing method of the same |
| abstract |
The present disclosure provides a semiconductor structure, including: an insulation region including a top surface; a semiconductor fin protruding from the top surface of the insulation region; a gate over the semiconductor fin; and a regrowth region partially positioned in the semiconductor fin, and the regrowth region forming a source/drain region of the semiconductor structure; wherein a profile of the regrowth region taken along a plane perpendicular to a direction of the semiconductor fin and top surfaces of the insulation region includes a girdle, an upper girdle facet facing away from the insulation region, and a lower girdle facet facing toward the insulation region, and an angle between the upper girdle facet and the girdle is greater than about 54.7 degrees. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10312155-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9882004-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022246611-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017148877-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108063092-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018108574-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10741453-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10658463-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11322590-B2 |
| priorityDate |
2015-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |