http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016284857-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-045 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78693 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-04 |
| filingDate | 2016-03-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_90a374176e49b6949d98fca23538a820 |
| publicationDate | 2016-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-2016284857-A1 |
| titleOfInvention | Transistor and Electronic Device |
| abstract | A semiconductor device with favorable electrical characteristics or a highly reliable semiconductor device is provided. The semiconductor device is a transistor including a first oxide film. The first oxide film contains indium, an element M, and zinc. The first oxide film includes a region in which the atomic ratio of indium to the element M and zinc satisfies indium:element M:zinc=xb:yb:zb For xb:yb:zb, (1−α1):(1+α1):m1 or (1−α2):(1+α2):m2 is satisfied, where α1 is greater than or equal to −0.43 and less than or equal to 0.18, α2 is greater than or equal to −0.78 and less than or equal to 0.42, and m1 and m2 are each greater than 0.7 and less than or equal to 1. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9825179-B2 |
| priorityDate | 2015-03-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 116.