Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-092 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-82345 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66439 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-401 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-092 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-775 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42392 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-495 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-84 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42384 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66742 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66772 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1203 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1079 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4908 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0673 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-84 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 |
filingDate |
2015-03-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aca4871baff82c610077f78cb5adefd5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c7eeb7c5fe0dc5a5fbafb4ecfeae8b77 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_72c790d51683f1946b768304dd683cf1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cf848ccd340484a8d2f4bb368aeb51a7 |
publicationDate |
2016-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-2016284810-A1 |
titleOfInvention |
Techniques for multiple gate workfunctions for a nanowire cmos technology |
abstract |
In one aspect, a method of forming a CMOS device with multiple transistors having different Vt's is provided which includes: forming nanowires and pads on a wafer, wherein the nanowires are suspended at varying heights above an oxide layer of the wafer; and forming gate stacks of the transistors at least partially surrounding portions of each of the nanowires by: i) depositing a conformal gate dielectric around the nanowires and on the wafer beneath the nanowires; ii) depositing a conformal workfunction metal on the conformal gate dielectric around the nanowires and on the wafer beneath the nanowires, wherein an amount of the conformal workfunction metal deposited around the nanowires is varied based on the varying heights at which the nanowires are suspended over the oxide layer; and iii) depositing a conformal poly-silicon layer on the conformal workfunction metal around the nanowires and on the wafer beneath the nanowires. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11777015-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2021007003-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9721846-B1 |
priorityDate |
2015-03-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |