| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9019c0ce5cb7b82c85e121f6cac86dce |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02269
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02194
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-022
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-60
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-87
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-91 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-51
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L49-02 |
| filingDate |
2014-03-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_db822bc90e6e4447b146fe4e0772008d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3d94760f7f753b2f7481f333b75565cd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ea669f56f04f346fd05e7453492770fb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3e397f0c66c132b127924a9b0d04fe82 |
| publicationDate |
2016-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2016284790-A1 |
| titleOfInvention |
Dielectric layer and manufacturing method of dielectric layer, and solid-state electronic device and manufacturing method of solid-state electronic device |
| abstract |
The invention provides a dielectric layer having high relative permittivity with low leakage current and excellent flatness. A dielectric layer 30 a according to the invention is made of multilayer oxide including a first oxide layer 31 made of oxide consisting of bismuth (Bi) and niobium (Nb) or oxide consisting of bismuth (Bi), zinc (Zn), and niobium (Nb) (possibly including inevitable impurities) and a second oxide layer 32 made of oxide of one type (possibly including inevitable impurities) selected from the group of oxide consisting of lanthanum (La) and tantalum (Ta), oxide consisting of lanthanum (La) and zirconium (Zr), and oxide consisting of strontium (Sr) and tantalum (Ta). |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10529471-B2 |
| priorityDate |
2013-03-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |