| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_96bfbc0ea50b96f00388c0d4802cd477 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823418
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823412
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823493
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823462 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1079
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-167
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-792
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-11568
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-11573
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-528
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42348 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-528
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-167
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423 |
| filingDate |
2016-03-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e22500c37411a21b67aa2e416ca728e3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6610358f28c4f392f28cb01930c500ea
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_81788547d1e0ff941cc0f379637ec5a4 |
| publicationDate |
2016-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2016284720-A1 |
| titleOfInvention |
Semiconductor device |
| abstract |
There is provided a semiconductor device including a memory region and a logic region. The memory region includes a transistor (memory transistor) that stores information by accumulating charge in a sidewall insulating film. The width of the sidewall insulating film of the memory transistor included in the memory region is made larger than the width of a sidewall insulating film of a transistor (logic transistor) included in the logic region. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10249756-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10727337-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10991707-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10607891-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11004975-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019363195-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9627529-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019237473-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10325899-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2021082372-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10741699-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019115259-A1 |
| priorityDate |
2015-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |