| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76879
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28556
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76846
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76826 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532 |
| filingDate |
2016-03-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dd3f80b5537e8ab56c35c6e87c990faf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3f238b077794d9b94f501a18cd6ec90d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_de7927fdd782694a1855e4c168e0e66e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c038dd29bec0cf2c4a9e21ee9b8a2317
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d1216cd9e0b6675edb9350f77f7921df
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_caa44e16ee81b9ec580a8325ace6080b |
| publicationDate |
2016-09-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2016276218-A1 |
| titleOfInvention |
METHOD OF MANUFACTURING Cu WIRING |
| abstract |
In a Cu wiring manufacturing method, a MnO x film which becomes a self-formed barrier film by reaction with an interlayer insulating film of a substrate is formed on a surface of a recess formed in the interlayer insulating film by ALD. A hydrogen radical process is performed on a surface of the MnO x film to reduce the surface of the MnO x film. A Ru film is formed by CVD on the surface of the MnO x film which has been reduced by the hydrogen radical process. A Cu-based film is formed on the Ru film by PVD to be filled in the recess. When the Ru film is formed, a film-formation condition of the MnO x film and a condition of the hydrogen radical process are set such that nucleus formation is facilitated and the Ru film is formed in a state where a surface smoothness is high. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10563304-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10978393-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2022035894-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018294162-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019013278-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9735046-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017062269-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11348872-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11302521-B2 |
| priorityDate |
2015-03-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |