| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_88fc7f9eb617072238851d46591a0c76 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y40-00 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78684
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66742
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0673
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02236
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0653
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02603
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66439
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42392
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-775
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate |
2015-04-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_beba71f900f5064897bcf88d798faa6a |
| publicationDate |
2016-09-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2016268376-A1 |
| titleOfInvention |
Nanowire structure and manufacturing method thereof |
| abstract |
A manufacturing method of a nanowire structure includes the following steps. A fin and a shallow trench isolation (STI) are formed on a substrate. A first patterned insulation layer is formed on an exposed upper part of the fin. The STI is then recessed for exposing a lower part of the fin. A second patterned insulation layer is formed in second regions for covering the first patterned insulation layer and the exposed part of the fin. The lower part of the fin is then removed for forming an upper fin and a lower fin in a first region. The STI is further recessed for exposing a portion of the lower fin and a portion of the fin in the second regions. The first patterned insulation layer on the first region is removed, and the upper fin is converted into a first nanowire. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017263709-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10998430-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10971367-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11367783-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2022086764-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11588051-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10541303-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018108526-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9735176-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11276769-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9721846-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10008567-B2 |
| priorityDate |
2015-03-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |