http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016254469-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b689215b03d74d8c2296c52ffeeb45c4 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-466 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-84 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L51-0562 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-486 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L51-0545 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L51-105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66007 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-739 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-05 |
| filingDate | 2013-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e8ba005c69494e9dc13c7b43866f04ea http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0db34ab66309f63e05db1cd265510266 |
| publicationDate | 2016-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-2016254469-A1 |
| titleOfInvention | Four-terminal gate-controlled thin-film organic thyristor |
| abstract | Technologies are generally described for a four-terminal, gate-controlled, thin-film thyristor device. The thyristor device may essentially be an n-type thin-film transistor (TFT) with an additional emitter terminal. The thyristor device may exhibit an S-shaped negative differential resistance (NDR) characteristic resulting from conductance modulation. The conductance modulation may be caused by formation of a secondary channel for current flow due to an inherent structure of the device. The secondary channel may be formed in a semiconductor area within the device, the semiconductor area including a hole transporting organic semiconductor layer (HTL) and an electron transporting organic semiconductor layer (ETL). A gate terminal of the thyristor device may further allow onset of NDR characteristics to be controlled and may allow the device to be switched off. |
| priorityDate | 2013-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 39.