| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6af9a57049d2d91c036d4f5ab49154cb |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76886 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B20-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5256
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-11206 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-525
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-112 |
| filingDate |
2015-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b1c243f6e52f1a1aa99cdfc19da4b68c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_858627e6ebad6f5424973862df33ca04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_866b4813947972b9aad74af52851d26b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8a7dfa88fb99afd5068691325d9f6edd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ef8325a06e5a9fe893533f96482cf53d |
| publicationDate |
2016-08-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2016240478-A1 |
| titleOfInvention |
Modified tungsten silicon |
| abstract |
A method for forming a precision resistor or an e-fuse structure where tungsten silicon is used. The tungsten silicon layer is modified by implanting nitrogen into the structure. |
| priorityDate |
2015-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |