http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016233099-A1

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publicationDate 2016-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2016233099-A1
titleOfInvention Tungsten film forming method
abstract A tungsten film forming method for forming a tungsten film on a surface of a target substrate by an ALD (atomic layer deposition) method comprises adding a reduction gas to allow an ALD reaction to mainly occur when a tungsten chloride gas is supplied. In the ALD method, the tungsten chloride gas as a tungsten source gas and the reduction gas for reducing the tungsten chloride gas are alternately supplied into a chamber which accommodates the target substrate and is maintained under a depressurized atmosphere, with a purge process for purging an inside of the chamber performed between the supply of the tungsten chloride gas and the supply of the reduction gas.
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20190062207-A
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