Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6656 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-518 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4966 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-022 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02296 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02186 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28211 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02299 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76826 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76829 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02332 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02227 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28158 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
filingDate |
2015-01-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_777773759ad9486e666816a6958882a7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_826b4a7de7875602d334b86fca131fc2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_46629f4e6bef29ccc8998cfc9bfce57e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e08d91ff19fce642276d4cd68e163970 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ac3c9365ac185348d99c5460aa0b0e23 |
publicationDate |
2016-08-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-2016225628-A1 |
titleOfInvention |
Nitridation on hdp oxide before high-k deposition to prevent oxygen ingress |
abstract |
A method of reducing a migration of oxygen into a high-k dielectric layer of a semiconducting device is disclosed. An oxide layer of the semiconducting device is deposited on a substrate. A chemical composition of a top portion of the oxide layer is altered. The high-k dielectric layer is deposited on the top portion of the oxide layer to form the semiconducting device. The altered chemical composition of the top portion of the oxide layer reduces migration of oxygen into the high-k dielectric layer. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9722076-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017062612-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10312366-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11004973-B2 |
priorityDate |
2015-01-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |