| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_aea8583efc4aa4e2a9706d789804d37b |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2213-82
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-5614
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0021
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2213-79 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0033
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-5678
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0069
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0004
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C29-50008
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0097 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C13-00 |
| filingDate |
2016-04-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_997676bf22b1a340842653c784e52bb9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0d189c101006b86a98f8c518d52eb4f0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0e24a769bb793bb544c70ce41317b72f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b23e18d392649f77e2f210bec778c13a |
| publicationDate |
2016-08-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2016225448-A1 |
| titleOfInvention |
Method and apparatus for healing phase change memory devices |
| abstract |
A first memory cell including a phase change material. The first memory cell is programmable to store one data value of a plurality of data values. The plurality of data values are represented by a plurality of non-overlapping ranges of resistance of the first memory cell. At least one testing pulse is applied to the first memory cell to establish a cell resistance of the first memory cell in an intermediate range of resistance, the intermediate range of resistance in between first and second adjacent ranges in the plurality of non-overlapping ranges of resistance representing the plurality of data values. After applying the at least one testing pulse to the first memory cell, it is determined whether to apply at least one healing pulse to repair the first memory cell, depending on relative values of (i) the cell resistance in the intermediate range of resistance and (ii) a reference resistance in the intermediate range of resistance. |
| priorityDate |
2014-06-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |