http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016218218-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d0a3d10ed9477633fd2c07c6da61dc49 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7855 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate | 2013-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_356963ec6538c200675b73342d8f63b5 |
| publicationDate | 2016-07-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-2016218218-A1 |
| titleOfInvention | Semiconductor devices and methods for manufacturing the same |
| abstract | Semiconductor devices and methods for manufacturing the same are provided. An example semiconductor device may include: a Semiconductor on Insulator (SOI) substrate, including a base substrate, a buried dielectric layer and an SOI layer, an active area disposed on the SOI substrate and including a first sub-area and a second sub-area, wherein the first sub-area includes a first fin portion, the second sub-area includes a second fin portion opposite to the first fin portion, and at least one of the first sub-area and the second sub-area includes a laterally extending portion; a back gate arranged between the first fin portion and the second fin portion; back gate dielectric layers sandwiched between the back gate and the respective fin portions; and a gate stack formed on the active area. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017092645-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9773922-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10622357-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015287648-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016086841-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10014299-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9859434-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9887196-B2 |
| priorityDate | 2013-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 45.