http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016216314-A9
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_897f5c829de887d3c675b600a0576886 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ed7472e8af702fdf8a16343de5db3989 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2601 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01Q60-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R27-2605 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-312 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2648 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01Q60-30 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R27-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01Q60-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R1-067 |
| filingDate | 2012-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_90b67d0990a406984958e52a4b285fbc |
| publicationDate | 2016-07-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-2016216314-A9 |
| titleOfInvention | Apparatus and method for combined micro-scale and nano-scale c-v, q-v, and i-v testing of semiconductor materials |
| abstract | Current Voltage and Capacitance Voltage (IV and CV) measurements are critical in measurement of properties of electronic materials especially semiconductors. A semiconductor testing device to accomplish IV and CV measurement supports a semiconductor wafer and provides a probe for contacting a surface on the wafer under control of an atomic Force Microscope or similar probing device for positioning the probe to a desired measurement point on the wafer surface. Detection of contact by the probe on the surface is accomplished and test voltage is supplied to the semiconductor wafer. A first circuit for measuring capacitance sensed by the probe based on the test voltage and a complimentary circuit for measuring Fowler Nordheim current sensed by the probe based on the test voltage are employed with the probe allowing the calculation of characteristics of the semiconductor wafer based on the measured capacitance and Fowler Nordheim current. |
| priorityDate | 2006-07-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.