| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823437
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823475
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76816
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823871
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 |
| filingDate |
2016-03-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2a1273d8955c5cdfe196f8916c7fa269
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5a797a3e9665be59af795918491e0745
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_29e8fe8ab437c31ecb8e443307b2957e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_63fd73707ce847dfe1e357eb372604ef
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_51fd586b4e2c7df058fe0fc07c6de169
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0ea0f35f058cb03400341e82aa29317a |
| publicationDate |
2016-07-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2016211176-A1 |
| titleOfInvention |
Method for forming integrated circuit structure with thinned contact |
| abstract |
Methods for forming integrated circuit structures are provided. The method includes providing a substrate including a first diffusion region, a second diffusion region, and an isolation structure separating the first diffusion region and the second diffusion region. The method further includes forming a gate structure over the substrate and forming an inter-layer dielectric (ILD) layer over the substrate. The method further includes forming a cutting mask over a portion of the gate structure over the isolation structure, and the cutting mask has an extending portion covering a portion of the ILD layer. The method further includes forming a photoresist layer having an opening, and a portion of the extending portion of the cutting mask is exposed by the opening. The method further includes etching the ILD layer through the opening to form a trench and filling the trench with a conductive material to form a contact. |
| priorityDate |
2013-11-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |