| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-1094 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76886
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53257
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32053
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28518
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28556 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 |
| filingDate |
2015-12-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f65cc2ba55f761d50318d848afe19b3f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ef8cf4cd33d98fa4ec1254657b946c03
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_78e08906f4cf6a1a02c756f43948f2c6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2ea3a8586df822f48c8610b449a6554e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_25d0b61a467bbffe39ff707047653338
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1468acad0639dea573cee9c4840316cd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fee588e4c2b5924607b1d26286c7d3a9 |
| publicationDate |
2016-07-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2016204029-A1 |
| titleOfInvention |
Laminate and core shell formation of silicide nanowire |
| abstract |
Methods and apparatus for forming a metal silicide as nanowires for back-end interconnection structures for semiconductor applications are provided. In one embodiment, the method includes forming a metal silicide stack comprising as plurality of metal silicide layers on a substrate by a chemical vapor deposition process or a physical vapor deposition process, thermal treating the metal silicide stack in a processing chamber, applying a microwave power in the processing chamber while thermal treating the metal silicide layer; and maintaining a substrate temperature less than 400 degrees Celsius while thermal treating the metal silicide layer. |
| priorityDate |
2015-01-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |