Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8abb210936dc3b56af93e346a2335b7f |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y40-00 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B32-172 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01D11-0288 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B32-174 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01D21-262 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01D11-0257 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B32-159 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B31-0266 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B32-166 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y30-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01D11-0265 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B31-02 |
filingDate |
2014-08-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fb1fa865475509bbd07a389f38697ac8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_be193f9a6e491aeea8b543f27f8d32e6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0bb672caea6cc490471891317d1cad91 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4349b20d0ab7b982ae4a8db52891dd2d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aabc0b54ab2cb90848fbc8b5261f4967 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_889c45a76043faeb314a8a8a79b579ff |
publicationDate |
2016-07-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-2016200578-A1 |
titleOfInvention |
Process for purifying semiconducting single-walled carbon nanotubes |
abstract |
A two-step sc-SWCNT enrichment process involves a first step based on selective dispersion and extraction of semi-conducting SWCNT using conjugated polymer followed by a second step based on an adsorptive process in which the product of the first step is exposed to an inorganic absorptive medium to selectively bind predominantly metallic SWCNTs such that what remains dispersed in solution is further enriched in semiconducting SWCNTs. The process is easily scalable for large-diameter semi-conducting single-walled carbon nanotube (sc-SWCNT) enrichment with average diameters in a range, for example, of about 0.6 to 2.2 nm. The first step produces an enriched sc-SWCNT dispersion with a moderated sc-purity (98%) at a high yield, or a high purity (99% and up) at a low yield. The second step can not only enhance the purity of the polymer enriched sc-SWCNTs with a moderate purity, but also further promote the highly purified sample to an ultra-pure level. Therefore, this two-step hybrid process provides sc-SWCNT materials with a super high purity, as well as both a high sc-purity (for example greater than 99%) and a high yield (up to about 20% or higher). |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108017049-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10322937-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10676361-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113193114-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108163840-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112591735-A |
priorityDate |
2013-08-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |