| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a62555ff12316a9a118542896b4c0af7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-1068 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78684
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-127
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1214
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1222
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-124
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L49-003
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66742
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-786 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L49-00 |
| filingDate |
2015-05-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b385ea6a8e8041ed4e2d2f8e6b49c95b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3dafe13e07a195608e44f614733e077c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0a2a56c1bb18c640666d18716e417c15
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_51692880a45f4c6357cf9cc9b46b3f1d |
| publicationDate |
2016-07-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2016197274-A1 |
| titleOfInvention |
Thin film transistor and manufacturing method thereof, array substrate, display device |
| abstract |
A thin film transistor and manufacturing method thereof, an array substrate and a display device are provided. In the manufacturing method of the thin film transistor, manufacturing an active layer includes: forming a germanium thin film, and forming pattern of the active layer through a patterning process; conducting a topological treatment on the germanium thin film with a functionalized element, so as to obtain the active layer ( 4 ) with topological semiconductor characteristics. The resultant thin film transistor has a higher carrier mobility and a better performance. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9704891-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10395849-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11204530-B2 |
| priorityDate |
2014-12-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |