Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-1063 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02186 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76807 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76811 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76879 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
filingDate |
2014-12-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_63dfc6ae6d24be4ce242cb9393651d26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8ede401c350b0404ab689026c340db23 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4233a5daa977a688cbf81fbbfd1090b8 |
publicationDate |
2016-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-2016190006-A1 |
titleOfInvention |
Mechanisms for forming semiconductor device structure with feature opening |
abstract |
A method for forming a semiconductor device structure is provided. The method includes forming a dielectric layer over a semiconductor substrate and forming a hard mask layer over the dielectric layer. The method also includes performing a plasma etching process to etch the hard mask layer to form an opening, and a gas mixture used in the plasma etching process includes a nitrogen-containing gas, a halogen-containing gas, and a carbon-containing gas. The gas mixture has a volumetric concentration of the nitrogen-containing gas in a range from about 20% to about 30%. A volumetric concentration ratio of the carbon-containing gas to the halogen-containing gas in the gas mixture is equal to about 0.3. The method further includes etching the dielectric layer through the opening in the hard mask layer to form a feature opening in the dielectric layer. The method includes forming a conductive material in the feature opening. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10276373-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11101175-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2020161180-A1 |
priorityDate |
2014-12-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |