| abstract |
A metal nitride material for a thermistor consists of a metal nitride represented by the general formula: M x Al y (N 1-w O w ) z (where “M” represents at least one of Fe, Co, Mn, Cu, and Ni, 0.70≦y/(x+y)≦0.98, 0.45≦z≦0.55, 0<w≦0.35, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase. A method for producing the metal nitride material for a thermistor includes a deposition step of performing film deposition by reactive sputtering in a nitrogen and oxygen-containing atmosphere using an M-Al alloy sputtering target (where “M” represents at least one of Fe, Co, Mn, Cu, and Ni). |