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filingDate 2016-02-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2016-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2016172250-A1
titleOfInvention Semiconductor Isolation Structure with Air Gaps in Deep Trenches
abstract A device includes a semiconductor substrate, a contact plug over the semiconductor substrate, and an Inter-Layer Dielectric (ILD) layer over the semiconductor substrate, with the contact plug being disposed in the ILD. An air gap is sealed by a portion of the ILD and the semiconductor substrate. The air gap forms a full air gap ring encircling a portion of the semiconductor substrate.
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