http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016168738-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ad856da99d5528ac0284a3ce4197ba19 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2885 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D7-123 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D5-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D3-38 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D3-38 |
| filingDate | 2013-12-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_35b4a70cb53fd62643c8b672c099df8a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4c03ddbd72e9e71aad69c1c4cd96e953 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9a716a4f0ac475f2c253857a5ac48439 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_877cf30f7a76131c86b929d46a4e2a3f |
| publicationDate | 2016-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-2016168738-A1 |
| titleOfInvention | Additive for Reducing Voids after Annealing of Copper Plating with Through Silicon Via |
| abstract | An additive for reducing voids after annealing of copper plating with through silicon via. The additive contains by weight percent: 0.05-1% of one or more of quaternized polyethylene imine and derivatives thereof having different molecular weights, and 1-10% of polyethylene glycol with an average molecular weight of 200-20000. The additive is used in combination with an electroplating solution of a copper methyl sulfonate system. The electroplating solution of a copper methyl sulfonate system contains 1-5 ml/L of the additive by volume ratio. The electroplating solution of a copper methyl sulfonate system contains by quality volume ratio: 50-110 g/L of copper ions, 5-50 g/L of methanesulfonic acid and 20-80 mg/L of chlorine ions. The electroplating solution also contains by volume ratio: 0.5-5 ml/L of accelerator, 5-20 ml/L of inhibitor and 5-10 ml/L of levelling agent. The additive for reducing voids after annealing of copper plating with through silicon via provided in the present invention can solve the problem of micro-voids between grain boundaries after high temperature annealing of copper plating. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113279026-A |
| priorityDate | 2013-08-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 56.