| abstract |
Methods of forming III-V LED structures on silicon fin templates are described. Those methods and structures may include forming an n-doped III-V layer on a silicon ( 111 ) plane of a silicon fin, forming a quantum well layer on the n-doped III-V layer, forming a p-doped III-V layer on the quantum well layer, and then forming an ohmic contact layer on the p-doped III-V layer. |