Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4966 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66651 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7834 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7833 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1054 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66636 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-665 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66492 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10 |
filingDate |
2016-01-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5efcc27338ef496bed6d8dfd6d34c34e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c609ac8fc657366d0315ece12affa7e9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1c168e32f4c16f49475f3cc98e169337 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7e449cec60bcc77cab8a81623e656a8c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8c98bf7a0ee3d2b24ba971f93d9016d3 |
publicationDate |
2016-06-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-2016155806-A1 |
titleOfInvention |
Structure and Method for Semiconductor Device |
abstract |
A semiconductor device and a method of forming the same are disclosed. The semiconductor device includes a substrate, and a source region and a drain region formed in the substrate. The semiconductor device further includes an impurity diffusion stop layer formed in a recess of the substrate between the source region and the drain region, wherein the impurity diffusion stop layer covers bottom and sidewalls of the recess. The semiconductor device further includes a channel layer formed over the impurity diffusion stop layer and in the recess, and a gate stack formed over the channel layer. |
priorityDate |
2014-03-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |