| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-27
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-35
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76816
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76832
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0332
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3085
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76814
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-315 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 |
| filingDate |
2015-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ab62dc3709d2ced16d707b3592a817d4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2a84274e3788f200bd7a74cde1fccbe0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c55d3e4e1bb339789594030ac65def10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9f50d17ce7fda8f0cdbad777abbaba04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fb14d2d1d735df65e6313a49099e9286 |
| publicationDate |
2016-06-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2016155743-A1 |
| titleOfInvention |
Method for Forming Patterns of Semiconductor Device |
| abstract |
A method for forming patterns of a semiconductor device includes forming a block copolymer layer on an underlying layer, the underlying layer including a first block copolymer having first and second polymer blocks; phase-separating the block copolymer layer to form first block portions including the first polymer block and a second block portion surrounding the first block portions and including the second polymer block; removing the first block portions to form first openings; forming block copolymer pillars to fill the first openings, the block copolymer pillars including a second block copolymer having third and fourth polymer blocks; phase-separating the block copolymer pillars to form third block portions including the third polymer block and fourth block portions including the fourth polymer block within the first openings; and removing the third block portions to form second openings. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9925740-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016194751-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10157744-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9776208-B2 |
| priorityDate |
2014-12-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |