Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ed62b7551998e54b35784cdbbb2778d5 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4412 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02167 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45523 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-52 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
filingDate |
2016-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_11276cd7b630770ff1eab498eaf58569 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3cd060bc4a3d9ce9aba67e94c46a132b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3c87a654bcbfbbbfc4ac5b550953e79e |
publicationDate |
2016-06-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-2016153090-A1 |
titleOfInvention |
Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium |
abstract |
A technique includes forming a film containing a first element, a second element, and carbon on a substrate by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing: forming a first solid layer containing the first element and carbon, and having a thickness of more than one atomic layer and equal to or less than several atomic layers, by supplying a precursor gas having a chemical bond of the first element and carbon to the substrate and confining the precursor gas within the process chamber, under a condition in which the precursor gas is autolyzed and at least a part of the chemical bond of the first element and carbon is maintained without being broken; and forming a second solid layer by supplying a reaction gas containing the second element to the substrate to modify the first solid layer. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109314057-A |
priorityDate |
2014-02-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |