| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1d1750b578ca9a780678f6b9b9c8b87d |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76832
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76841
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5283
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53223
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53252
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53266
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53295
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-481 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-528
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-48 |
| filingDate |
2015-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a967643b8bef5aab4278b4be712d3447
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1bdd5b02244f6cd5e00282082eca5a32 |
| publicationDate |
2016-05-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2016148858-A1 |
| titleOfInvention |
Method of forming through-hole in silicon substrate, method of forming electrical connection element penetrating silicon substrate and semiconductor device manufactured thereby |
| abstract |
The present invention herein relates to a method of forming a through-hole in a silicon substrate. The present invention herein also relates to a method of forming an electrical connection element which penetrates through the silicon substrate, and to a semiconductor device manufactured thereby. More particularly, the present invention herein relates to a method of forming in a silicon substrate a through-hole capable of reducing roughness in a side wall of the through-hole and exhibiting low permittivity, by alternatingly laminating cationic and anionic polymer on the through-hole that has a dent on the side wall to form a porous elastic layer, and also relates to a method of forming an electrical connection that penetrates through the silicon substrate, and to a semiconductor device manufactured thereby. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016271930-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2018088487-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109585829-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I754340-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I768801-B |
| priorityDate |
2014-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |