Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b55c349b43c3ecba4977fd52cc8f8c67 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B32B2307-416 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B32B17-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-3414 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-3464 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02B5-285 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02B5-282 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-086 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-20 |
filingDate |
2014-01-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6c57a0cbdd4533d70bf7c851653b0a04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e27b43de747078a7efcbe2320b5ddfe0 |
publicationDate |
2016-05-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-2016145736-A1 |
titleOfInvention |
Method for producing infrared radiation reflecting film |
abstract |
The method for manufacturing an infrared reflecting film comprises, in order: a metal layer forming step of depositing a metal layer on a transparent film substrate; a metal oxide layer forming step of depositing a surface-side metal oxide layer by DC sputtering on the metal layer so as to be in direct contact with the metal layer; and a transparent protective layer forming step of depositing a transparent protective layer on the surface-side metal oxide layer. In the metal oxide layer forming step, a sputtering target used for DC sputtering contains zinc atoms and tin atoms, and is preferably formed by sintering a metal powder and at least one metal oxide among zinc oxide and tin oxide. In the surface-side metal oxide layer forming step, an inert gas and an oxygen gas are introduced into a sputtering chamber. The oxygen concentration in the gas introduced to the sputtering chamber is preferably not more than 8 vol %. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10795066-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110305354-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016377902-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017030348-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9904129-B2 |
priorityDate |
2013-01-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |