| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1c4c7d3bd094d293b992657a3aedf343 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y40-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-321
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y15-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G06F2203-04103
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F4-00 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G06F3-041
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G06F3-0412
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01B13-34 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G06F3-041
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01B13-34 |
| filingDate |
2015-11-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_def29510a8962c43bb9342485a4e04b3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_acf551a5a1739aa483ab1ea510c201b1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0f639bdf15a1364a71e4e10656beae71
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_10981b83ff9fd666c1f61252ea914099 |
| publicationDate |
2016-05-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2016132165-A1 |
| titleOfInvention |
Methods of forming nanoscale conductive films and touch devices including the nanoscale conductive films |
| abstract |
The present disclosure provides a method of forming a nanoscale conductive film. The method comprises providing a nanoscale base film, forming a first patterned insulating layer on the nanoscale base film, and etching the nanoscale base film in a current generation system, using the first patterned insulating layer as a mask. The nanoscale base film includes a substrate, a first overcoat on one side of the substrate, and a first nano material layer laminated between the substrate and the first overcoat. The first patterned insulating layer is formed on the first overcoat, exposing portions of the first overcoat. In the first nano material layer, first regions are masked by the first insulating layer and second regions are not masked by the first insulating layer. The first regions and the second regions are electrically isolated from each other after etching the nanoscale base film in the current generation system. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018311964-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11545651-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110246607-A |
| priorityDate |
2014-11-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |