| abstract |
A semiconductor device includes: a semiconductor element; a joined member that is joined to the semiconductor element and includes a nickel film; and a joining layer that is joined to the joined member and contains 2.0 wt % or higher of copper, in which the joining layer includes a solder portion and a Cu 6 Sn 5 portion, base metal of the solder portion contains at least tin as a constituent element and contains elemental copper, and the Cu 6 Sn 5 portion is in contact with the nickel film. |