| abstract |
A silicon carbide substrate capable of stably forming a device of excellent performance, and a method of manufacturing the same are provided. A silicon carbide substrate is made of a single crystal of silicon carbide, and has a width of not less than 100 mm, a micropipe density of not more than 7 cm −2 , a threading screw dislocation density of not more than 1×10 4 cm −2 , a threading edge dislocation density of not more than 1×10 4 cm −2 , a basal plane dislocation density of not more than 1×10 4 cm 2 , a stacking fault density of not more than 0.1 cm −1 , a conductive impurity concentration of not less than 1×10 18 cm 3 , a residual impurity concentration of not more than 1×10 16 cm −3 , and a secondary phase inclusion density of not more than 1 cm −3 . |