| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6af9a57049d2d91c036d4f5ab49154cb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_827f58bacb8fef905977e1f8b3c7aace |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-82345
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66553
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823456
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4966
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42376
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42372
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-495 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 |
| filingDate |
2014-10-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d39a384e486386c1d9af52a8bcf74eb0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d6be6f52eb7321f8d7e11b2ad3a5bde2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_530fb57d185f6b7d871ffb646f0a4028 |
| publicationDate |
2016-04-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2016104644-A1 |
| titleOfInvention |
Process for integrated circuit fabrication including a uniform depth tungsten recess technique |
| abstract |
Dummy gates are removed from a pre-metal layer to produce a first opening (with a first length) and a second opening (with a second length longer than the first length). Work function metal for a metal gate electrode is provided in the first and second openings. Tungsten is deposited to fill the first opening and conformally line the second opening, thus leaving a third opening. The thickness of the tungsten layer substantially equals the length of the first opening. The third opening is filled with an insulating material. The tungsten is then recessed in both the first and second openings using a dry etch to substantially a same depth from a top surface of the pre-metal layer to complete the metal gate electrode. Openings left following the recess operation are then filled with a dielectric material forming a cap on the gate stack which includes the metal gate electrode. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10790394-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10714376-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11532748-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017148890-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019252539-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9660084-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019393077-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9947589-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017256640-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10269963-B2 |
| priorityDate |
2014-10-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |