| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36f8253f3d0d59bcd9259217d4385d10 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41766 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42368
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66734
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7397
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1095
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7811
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7813
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7827
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-407 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate |
2015-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a44ea7bab085602681b5364a06097f6d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_97dd1cb6ee250e870b3282b87d0a1e3a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a39e8b1d70dea2ec3b6a25b3458bc38f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_68a73d05fb4dcc7afe81c5978dea3e04 |
| publicationDate |
2016-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2016093728-A1 |
| titleOfInvention |
Semiconductor Device and Method of Manufacturing the Same |
| abstract |
A semiconductor device comprises a semiconductor body. The semiconductor body comprises insulated gate field effect transistor cells. At least one of the insulated gate field effect transistor cells comprises a source zone of a first conductivity type, a body zone of a second, complementary conductivity type, a drift zone of the first conductivity type, and a trench gate structure extending into the semiconductor body through the body zone along a vertical direction. The trench gate structure comprises a gate electrode separated from the semiconductor body by a trench dielectric. The trench dielectric comprises a source dielectric part interposed between the gate electrode and the source zone and a gate dielectric part interposed between the gate electrode and the body zone. The ratio of a maximum thickness of the source dielectric part along a lateral direction and the minimum thickness of the gate dielectric part along the lateral direction is at least 1.5. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9691892-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9530884-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9391194-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016093731-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10943896-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2021376124-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016218209-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019081147-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11610880-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108666361-A |
| priorityDate |
2014-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |