| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c72d118f5664072de841f9c5c34b9d99 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1083
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66068
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66712
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K17-687
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42368
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7802 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03K17-687 |
| filingDate |
2013-11-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_30acf58e38f46013f99f7264e966311c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eba90f276bea9857ba705d5f7f3907ad
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e736cc419779b4f1237bc144d0e363f7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6a5e323281e88253fbc48e505f4e252d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_901125bcc8da417ce854aac549c07c6a |
| publicationDate |
2016-03-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2016087091-A1 |
| titleOfInvention |
Insulating gate field-effect transistor device and method of making the same |
| abstract |
An insulated gate field-effect transistor (IGFET) device includes a semiconductor body ( 200 ) and a gate oxide ( 234 ). The semiconductor body includes a first well region ( 216 ) doped with a first type of dopant and a second well region ( 220 ) that is doped with an opposite, second type of dopant and is located within the first well region. The gate oxide includes a relatively thinner outer section ( 244 ) and a relatively thicker interior section ( 246 ). The outer section is disposed over the first well region and the second well region. The interior section is disposed over a junction gate field effect transistor region ( 218 ) of the semiconductor body doped with the second type of dopant. A conductive channel is formed through the second well region when a gate signal is applied to a gate contact ( 250 ) disposed on the gate oxide. |
| priorityDate |
2012-12-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |