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filingDate 2015-04-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f45caa4469d2c161cabaa1a3dfa822ee
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publicationDate 2016-03-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2016079259-A1
titleOfInvention Nonvolatile memory device
abstract A nonvolatile memory device includes a memory cell array and a peripheral circuit. The peripheral circuit is connected to the memory cell array through conductive lines and includes transistors. Each of the transistors is formed on the substrate and includes first and second regions and a gate electrode. In at least one of the transistors, the first region is connected to at least one of the conductive lines through first contact plugs extending in the direction perpendicular to the substrate, and second contact plugs extending in the direction perpendicular to the substrate. A contact area of each of the first contact plugs is different from a contact area of each of the second contact plugs.
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