| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6af9a57049d2d91c036d4f5ab49154cb |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32132
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42376
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-665
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6653
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7833
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26586
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31155
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6659 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423 |
| filingDate |
2014-09-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5a48a0d70ecf40bf13e0ce74da4b612d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8614aab6772131cffdf3dcf0082520db
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_77a46d4ce41c8710279c881ca3621d2f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bb1cb0668b3985ddd186fb793ba99f6b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4728b9496af84af475fbf7a4cef67534 |
| publicationDate |
2016-03-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2016079086-A1 |
| titleOfInvention |
Method of forming a semiconductor device and according semiconductor device |
| abstract |
The present disclosure provides a method of forming a semiconductor device, including a shaping of a gate structure of the semiconductor device such that a spacer removal after silicide formation is avoided and silicide overhang is suppressed. In some aspects of the present disclosure, a method of forming a semiconductor device is provided wherein a gate structure is provided over an active region of a semiconductor substrate, the gate structure including a gate electrode material and sidewall spacers. At least one of the gate electrode material and the sidewall spacers are shaped by applying a shaping process to the gate structure and a silicide portion is formed on the shaped gate structure. |
| priorityDate |
2014-09-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |