| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6af9a57049d2d91c036d4f5ab49154cb |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823842 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B51-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-516
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6684
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-40111
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28158
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823462
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B51-30 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-51
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate |
2014-07-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3ef6fc49830ca080195e9d1f84b101c2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c84f08f39d435e569b024a1c6c235b35
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_37ca468a90e8068b98bae2790c0f898f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9a743b81786753d39675075cb1d921aa |
| publicationDate |
2016-02-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2016035856-A1 |
| titleOfInvention |
Semiconductor structure including a ferroelectric transistor and method for the formation thereof |
| abstract |
An illustrative semiconductor structure described herein includes a substrate including a logic transistor region, a ferroelectric transistor region and an input/output transistor region. A logic transistor is provided at the logic transistor region. The logic transistor includes a gate dielectric and a gate electrode. An input/output transistor is provided at the input/output transistor region. The input/output transistor includes a gate dielectric and a gate electrode. The gate dielectric of the input/output transistor has a greater thickness than the gate dielectric of the logic transistor. A ferroelectric transistor is provided at the ferroelectric transistor region. The ferroelectric transistor includes a ferroelectric dielectric and a gate electrode. The ferroelectric dielectric is arranged between the ferroelectric transistor region and the gate electrode of the ferroelectric transistor. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108122909-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9748354-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11476345-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I743794-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102018110839-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9871136-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2021367080-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022271046-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10937783-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I690080-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11037941-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022302280-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11069676-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9627534-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018277653-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10978575-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10763270-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022149206-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109104880-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10483371-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11374109-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10672881-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10872966-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10879392-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9793397-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11527649-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11728332-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11043489-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11508755-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10312084-B2 |
| priorityDate |
2014-07-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |