| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_81cfb88d909c75104c0c8d61799a72b0 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-422
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0206
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B65D85-70
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K13-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate |
2015-10-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4c336a14cb9352644f0845d38a9dc50a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_44544d28949688a823f8f9aea56d309e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_620cf28b7206cda27ed440c0b1dd34ec
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_22747735dcdeb2a96d17ab5d7d126a64
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_663add3d373d90e474234a6efcc63efc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_04cf65a7e13f5dd8a82619b8238a70d1 |
| publicationDate |
2016-02-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2016035580-A1 |
| titleOfInvention |
Compositions and methods for the selective removal of silicon nitride |
| abstract |
Compositions useful for the selective removal of silicon nitride materials relative to polysilicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon. The removal compositions include fluorosilicic acid, silicic acid, and at least one organic solvent. Typical process temperatures are less than about 100° C. and typical selectivity for nitride versus oxide etch is about 200:1 to about 2000:1. Under typical process conditions, nickel-based silicides as well as titanium and tantalum nitrides are largely unaffected, and polysilicon etch rates are less than about 1 Å min −1 . |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9868902-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10465112-B2 |
| priorityDate |
2006-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |