| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6af9a57049d2d91c036d4f5ab49154cb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823468
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-845
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-665
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823418
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0886
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823437
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823431
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41783
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417 |
| filingDate |
2015-10-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1628fc616694b5039a929cb617c8a706
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f01f11877be1e88ee67da2158127c671
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f6c3e92b50da04108343fa21a19c4480
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f855e383a4e11163ba9d72bf1acee986
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_90bd64113ae5080dc63059f830b4015b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_81b334c916619a0b3a222e0e3e5be17f |
| publicationDate |
2016-01-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2016027700-A1 |
| titleOfInvention |
Gate structure cut after formation of epitaxial active regions |
| abstract |
A gate structure straddling a plurality of semiconductor material portions is formed. Source regions and drain regions are formed in the plurality of semiconductor material portions, and a gate spacer laterally surrounding the gate structure is formed. Epitaxial active regions are formed from the source and drain regions by a selective epitaxy process. The assembly of the gate structure and the gate spacer is cut into multiple portions employing a cut mask and an etch to form multiple gate assemblies. Each gate assembly includes a gate structure portion and two disjoined gate spacer portions laterally spaced by the gate structure portion. Portions of the epitaxial active regions can be removed from around sidewalls of the gate spacers to prevent electrical shorts among the epitaxial active regions. A dielectric spacer or a dielectric liner may be employed to limit areas in which metal semiconductor alloys are formed. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10332898-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108091653-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10861860-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102588209-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11211450-B2 |
| priorityDate |
2014-01-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |