http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016020211-A1

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_aea8583efc4aa4e2a9706d789804d37b
classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-20
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76895
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31122
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32133
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32137
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0276
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-528
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1052
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5329
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-528
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105
filingDate 2014-07-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_78448c06e2146395f47684bec0275040
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_501052f7a7255b346c42e23be05db150
publicationDate 2016-01-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2016020211-A1
titleOfInvention Composite Hard Mask Etching Profile for Preventing Pattern Collapse in High-Aspect-Ratio Trenches
abstract High-aspect ratio trenches in integrated circuits are fabricated of composite materials and with trench boundaries having pencil-like etching profiles. The fabrication methods reduce surface tension between trench boundaries and fluids applied during manufacture, thereby avoiding pattern bending, bowing, and collapse. The method, further, facilitates fill-in of trenches with suitable selected materials.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019064922-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2022001487-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11676810-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022216215-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2022142266-A1
priorityDate 2014-07-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014295636-A1
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419522015
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559581
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID3084099
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID297

Total number of triples: 43.