| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b2b31f8612f522a744762d83c23879ba |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3434
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0287
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-1231 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2272
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-028
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-4031
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-4025
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3434
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2077
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-4018
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0275
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-1231 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-028
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-343 |
| filingDate |
2015-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ac2878d42b0dfd85d1fc7a91a287c2e9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_279182f67d92a16191a583f3b159aac6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6f0ac1766b3d257db4f691aaac289167
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a27723c3d169593c732297f8504a7289 |
| publicationDate |
2016-01-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2016013621-A1 |
| titleOfInvention |
Distributed feedback laser diode array and method of manufacturing same |
| abstract |
Provided is a method of manufacturing a distributed feedback laser diode array (DFB-LDA) including: forming active layers corresponding to a plurality of channels using electron beam lithography; forming a plurality of mask patterns between the active layers; and growing the active layers using electron beam lithography, wherein the opening widths of the plurality of mask patterns corresponding to the plurality of channels are different from one another. |
| priorityDate |
2014-07-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |