| abstract |
A method for manufacturing a semiconductor device may include the following steps: providing a substrate structure; forming, on the substrate structure, a first gate structure, a second gate structure, and a trench between the first gate structure and the second gate structure; providing a liner that covers the first gate structure, the second gate structure, and a bottom of the trench; after the liner has been provided, providing a dielectric layer that fills the trench; and performing one or more iterations of a treatment process on the dielectric layer, wherein the treatment process includes performing a curing process on the dielectric layer and subsequently performing an annealing process on the dielectric layer. |